Effect of Location of Zero Gauss Plane on Oxygen Concentration at Crystal Melt Interface During Growth of Magnetic Silicon Single Crystal Using Czochralski Technique
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Procedia Technology
سال: 2016
ISSN: 2212-0173
DOI: 10.1016/j.protcy.2016.03.053